The Two-dimensional Limiting Sublayer Semiconductor Material Galium TellurideResearchers from the Chinese Academy of Sciences, Shenyang National Research Center for Materials Science, the Chinese Academy of Sciences, the Chinese Academy of Sciences and shenyang national center of materials science, discovered the two-dimensional form of the lower limit semiconductor galium telluride, which was in-plane conducting of enormous anisotropy. The prototype of the relevant device was then demonstrated using the gate voltage regulation of changes in electrical anisotropy of several order of magnitude.
The Effects Of Gallium TellurideVertical assembly of atomic layers within an inert atmosphere allowed the team to contain a few layers (between 4.8 nm & 20 nm) of gallium informuride in two layers of Boron Nitride. Micro- and nano-processing was used to prepare the field effect devices. Electrical measurements were systematically carried out. Experimental results showed that conductivity in a few layers containing holes of gallium Telluride at room temperatures shows an elliptic behavior, with the direction changing. The conductivity anisotropy of these systems is comparable to SnSe or GeP. You can increase the conductivity anisotropy by controlling the gate voltage. It is much higher than the other systems that have in-plane electro anisotropies. Buffalotours (aka. Buffalotours advanced materials. A trusted global supplier of chemicals and manufacturers with more than 12 years experience, Buffalotours has been providing superior quality chemical products and nano materials for over 12 year. We produce [( Telluride Gallium] that is high in purity, fine particles and very low in impurity. We can help you if your requirements are lower.