(Samsung Announced The Mass Production Of The World’S First 3nm Gaa Process Chip)
The 3nm GAA process replaces current FinFET transistor designs. GAA technology uses nanosheets with wider channels. This allows higher performance at lower voltage levels. Samsung claims the first-generation 3nm chips reduce power use by up to 45% and boost performance by 23% over 5nm chips. The surface area also shrinks by 16%. Future versions plan bigger improvements. The chips will likely appear in high-performance computing, smartphones, and other electronics. Samsung said it works with global partners to expand applications. The company did not name specific clients. Industry experts expect the tech to reach devices like data center servers and AI-driven products. Samsung’s device solutions division head, Dr. Siyoung Choi, called the launch a “key milestone.” He stressed the need for innovation in semiconductor tech. The firm aims to keep leading in advanced chipmaking. Rivals like TSMC and Intel are developing similar processes. Samsung plans to refine the 3nm process for mobile and high-performance computing first. Later phases will target other markets. The company also continues developing 2nm GAA tech. It expects to start production by 2025. The 3nm GAA process uses less energy. This aligns with global efforts to cut carbon emissions. Samsung highlighted sustainability as a priority. The chips could help companies meet environmental goals. Samsung remains a major player in foundry services. It holds about 17% of the global market. The firm aims to triple chip production capacity by 2026. It recently announced investments in new U.S. and South Korean facilities.
(Samsung Announced The Mass Production Of The World’S First 3nm Gaa Process Chip)
The announcement strengthens Samsung’s position in advanced semiconductor manufacturing. Competitors face pressure to match its progress. Analysts say the shift to GAA could reshape the industry.