An inorganic compound with the chemical name GaN. It is composed of both nitrogen and galium. Gallium nitride, a direct bandgap semiconductor, has been widely used in light emitting diodes (LEDs) since 1990. It has high hardness and a similar structure to wurtzite.
The properties of Gallium Nickel:
Gallium Nitride is a stable and hard material. It has a melting temperature of approximately 1700°C. GaN exhibits the greatest degree of ionization among Group III and V compounds. GaN crystals have hexagonal wurtzite structures when they are exposed to atmospheric pressure.
At room temperature gallium nitride dust is insoluble in alkali and water. But it will dissolve slowly in hot alkali. Low quality GaN crystals can be damaged by H2SO4, H3PO4, and NaOH. GaN has unstable properties at higher temperatures when exposed to HCL or H2 gaz, and it is more stable in N2 gas.
Gallium Nitride Application:
Use of gallium Nitride powder in electronic devices
GaN is a series of GaN materials that has a low heat generation rate, high breakdown electric field and can be used to develop high-temperature electronic devices with high power and microwave frequencies. A wide range of GaN heterostructures can now be grown thanks to MBE technology, breakthroughs in important thin film growth techniques, and the development of MBE technology for the application of GaN material.
Use of gallium Nitride powder in optoelectronics devices
GaN materials are ideal for producing short-wavelength light emitting devices. GaN, and all its alloys have a band gap that covers the entire spectrum from red to ultraviolet. Japan’s 1991 homojunction GaN Blue LED was the first to be developed. InGaN/AlGaN double-homojunction, ultra-bright GaN LEDs and single quantum well GaN LEDs were both created. GaN ultraviolet detectors were developed. They will play an important role in missile early warning and flame detection.
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