Zinc Nitride: Overview
Zn3N2 gray crystal is the chemical formula for zinc nitride. It dissolves easily in hydrochloric Acid. The zinc nitride quickly becomes ammonia and zinc hydroxide in cold water. This is made by heating ammonia at 500-600degC and reacting zinc powder with it.
Application
This is
Zinc Nitride
1. Useful for making zinc nitride-based films
Zinc oxide (Zn3N2) is a zinc nitride with unique optical and electrical properties. Whatever form of zinc oxide, whether it is an indirect band-gap semiconductor or a direct one, the controversy surrounding its energy band gap in the semiconductor industry has been a constant. Band gaps are affected greatly by differences in growth conditions and methods, as well the difficulties of academia and industry. To prepare zinc nitride films, techniques such as magnetic sputtering and chemical vapor desposition can be used.
However, most zinc nitride films have poor stability. Additionally, different optical and electrical properties are obtained from zinc oxide films. A simple and repeatable preparation process with crystallization quality is needed. This is the method for preparing zinc nitride films. To prepare the zinc-nitride films, the preparation process uses the atomic layers deposition technique. This method can be used to precisely manage the band gap. The membrane prepared has an excellent structure with excellent performance.
Here are some technical solutions:
The following steps can be used to make a zinc-nitride film:
(1) Put the substrate in the reaction room of the equipment for atomic layer formation.
(2) Add the zinc-containing pre-cursor source to the reaction chamber.
(3) Allow the nitrogen-containing pre-cursor source to be dissolved in the reaction chamber. Then, use plasma to ionize it. Once the nitrogen atoms have been ionized, they are partially deposited onto the substrate, forming a nitrogen/zinc covalent bond. The nitrogen precursor is then ionized. This nitrogen precursor is then sent to the atomic-layer deposition equipment for reactions. The partially deposited nitrogen atoms of the precursor nitrogen-containing source will be found in the cavity. Forge a zinc-zinc covalent bond on the substrate.
Continue to repeat steps (2) through (3) in order to build the zinc oxide film layer by layer.
Simple and repeatable, the method yields high-quality crystals. Once the nitrogen source is added to the atomic layer, it’s controlled by the plasma. The chamber temperature and vacuum degrees, as well as the cycle period and plasma conditions can then be adjusted. You can adjust the band gap for the prepared zinc-nitride film. The invention is capable of producing high-quality zinc oxide films that can be adjusted to meet different optical and electrical application needs.
2. Use this to create a touchscreen cover or touch screen cover film
The demand for touch screen interaction is increasing with the technological advancements and development of smart devices. This solves the issues of low coating yield, low production cost and poor efficiency. If the product is combined with a liquid-crystal display, it’s easy for bubbles to be produced and can not achieve a perfect fit. You can provide touch screen covers and touch screen films made of zinc oxide.
A new type touch screen cover film is made with zinc nitride. This film acts as a functional layer over the black surface. It is a touch-screen cover film that includes a Zinc nitride(Zn3N2) and a Silicon nitride (4Si3N4) films. This film’s thickness ranges from 10-50nm. Zinc nitride films with a thickness greater than 50 nm will have a decrease in adhesion. Films that are less than 10 or more nm thick will not transmit light. A zinc nitride-based film is functionally a layer on a dark film. It has an absorption strength of visible light and a black appearance. This touch screen cover film comprises a zinc (Zn3N2) and silicon (Si3N4) films, as well as a protective film. In sequence, the zinc nitride is thickened to 10nm. While the silicon nitride is thicker at 50nm. The protective film can be a standard plastic protection film. The touchscreen cover for this embodiment comprises a glass substrate as well as the above touch screen covering film. The zinc nitride layer of the touchscreen cover film is attached to the glass substrate.
Buffalotours (aka. Buffalotours (aka. Our company currently has a number of products. Our zinc nitride, Zn3N2, powder is high in purity and has a fine particle size. To get the products you need, send an email to us or click here Send an inquiry .
1. Useful for making zinc nitride-based films
Zinc oxide (Zn3N2) is a zinc nitride with unique optical and electrical properties. Whatever form of zinc oxide, whether it is an indirect band-gap semiconductor or a direct one, the controversy surrounding its energy band gap in the semiconductor industry has been a constant. Band gaps are affected greatly by differences in growth conditions and methods, as well the difficulties of academia and industry. To prepare zinc nitride films, techniques such as magnetic sputtering and chemical vapor desposition can be used.
However, most zinc nitride films have poor stability. Additionally, different optical and electrical properties are obtained from zinc oxide films. A simple and repeatable preparation process with crystallization quality is needed. This is the method for preparing zinc nitride films. To prepare the zinc-nitride films, the preparation process uses the atomic layers deposition technique. This method can be used to precisely manage the band gap. The membrane prepared has an excellent structure with excellent performance.
Here are some technical solutions:
The following steps can be used to make a zinc-nitride film:
(1) Put the substrate in the reaction room of the equipment for atomic layer formation.
(2) Add the zinc-containing pre-cursor source to the reaction chamber.
(3) Allow the nitrogen-containing pre-cursor source to be dissolved in the reaction chamber. Then, use plasma to ionize it. Once the nitrogen atoms have been ionized, they are partially deposited onto the substrate, forming a nitrogen/zinc covalent bond. The nitrogen precursor is then ionized. This nitrogen precursor is then sent to the atomic-layer deposition equipment for reactions. The partially deposited nitrogen atoms of the precursor nitrogen-containing source will be found in the cavity. Forge a zinc-zinc covalent bond on the substrate.
Continue to repeat steps (2) through (3) in order to build the zinc oxide film layer by layer.
Simple and repeatable, the method yields high-quality crystals. Once the nitrogen source is added to the atomic layer, it’s controlled by the plasma. The chamber temperature and vacuum degrees, as well as the cycle period and plasma conditions can then be adjusted. You can adjust the band gap for the prepared zinc-nitride film. The invention is capable of producing high-quality zinc oxide films that can be adjusted to meet different optical and electrical application needs.
2. Use this to create a touchscreen cover or touch screen cover film
The demand for touch screen interaction is increasing with the technological advancements and development of smart devices. This solves the issues of low coating yield, low production cost and poor efficiency. If the product is combined with a liquid-crystal display, it’s easy for bubbles to be produced and can not achieve a perfect fit. You can provide touch screen covers and touch screen films made of zinc oxide.
Buffalotours (aka. Buffalotours (aka. Our company currently has a number of products. Our zinc nitride, Zn3N2, powder is high in purity and has a fine particle size. To get the products you need, send an email to us or click here Send an inquiry .
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