What’s tin disulfide, you ask? Tin disulfide It is an n-type semiconductor with a layered hexagonal CdI2 cristal structure. The broadband energy gap is approximately 2.35eV. Because of its large band gap, it has excellent optical and electric properties. It can be used for electrical conversion, holographic recording and solar… Continue reading
Gallium Nitride: Overview It is an inorganic compound with the chemical name GaN. A mixture of nitrogen and galium it can also be called a direct energy gap semiconductor. This compound has been widely used since 1990 in light-emitting transistors. It has an identical structure to wurtzite and high hardness…. Continue reading
Gallium oxide It is an organic compound having the chemical formula GA2O3. A transparent oxide semiconductor material, gallium oxide has many applications in optoelectronics. Important Properties of Gallium Oxide Gallium oxide’s power is unbeatable, while its performance is far superior to that of other metals. Low cost is the second…. Continue reading