boron phosphide is an inorganic compound of boron element and phosphorus element, a semiconductor. The crystal growth of boron arsenide and boron phosphide in the form of bulk crystals and epitaxial layers on suitable substrates is discussed and their physical, chemical, and electrical properties are investigated. Various techniques required for fabrication of boron phosphide devices, such as junction shaping, diffusion, and low-resistance ohmic contacts, are also developed.
Monolayer two-dimensional boron phosphide (BP) has shown great potential for thermoelectric applications due to its good thermodynamic stability, wide bandgap and ultra-high carrier mobility. However, BP’s lattice thermal conductivity is significantly higher than other two-dimensional materials and has limited its practical application.
A new technique is used to reduce the thermal conductivity of BP. The BP molecule has an unusual structure, which allows van der Waals interactions to effectively reduce the thermal conductivity. In addition, the atomic radius of a BP atom is small, resulting in the formation of a non-planar surface. The zigzag-type chiral structure of BPNT is also demonstrated, showing that it is more polar than armchair-type BNNTs.
The synthesis of high-quality epitaxial BP film is successfully achieved on silicon carbide (SiC) substrates for the first time. The optimal growth conditions are established, the film formation mechanism and defect origination process are interpreted through an integrated experimental and theoretical study. Four types of BP devices were fabricated, including metal-insulator-boron phosphide structures, Schottky barriers and boron phosphide-silicon carbide heterojunctions. Easily visible red electroluminescence was observed from both epitaxial and solution grown p-n homojunctions.